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| DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors FEATURES * Interchangeability of drain and source connections * High IDSS range * Frequency up to 450 MHz. APPLICATIONS * VHF and UHF amplifiers * Mixers * General purpose switching. DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN BF246A; BF246B; BF246C; BF247A; BF247B; BF247C SYMBOL DESCRIPTION BF246A; BF246B; BF246C 1 2 3 d g s drain gate source BF247A; BF247B; BF247C 1 2 3 d s g drain source gate handbook, halfpage 2 1 3 g MAM257 d s Fig.1 Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS PARAMETER drain-source voltage gate-source cut-off voltage drain current BF246A; BF247A BF246B; BF247B BF246C; BF247C Ptot yfs Crs Tj total power dissipation forward transfer admittance reverse transfer capacitance operating junction temperature up to Tamb = 50 C ID = 10 mA; VDS = 15 V; f = 1 kHz ID = 10 mA; VDS = 15 V; f = 1 MHz ID = 10 nA; VDS = 15 V VDS = 15 V; VGS = 0 30 60 110 - 8 - - - - - - - 3.5 - 80 140 250 400 - - 150 mA mA mA mW mS pF C CONDITIONS - -0.6 MIN. - - TYP. MAX. 25 -14.5 UNIT V V 1996 Jul 29 2 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS IG Ptot Tstg Tj gate current total power dissipation storage temperature operating junction temperature PARAMETER drain-source voltage BF246A; BF246B; BF246C; BF247A; BF247B; BF247C CONDITIONS - - up to Tamb = 50 C - MIN. MAX. 25 10 400 +150 150 V UNIT mA mW C C -65 - THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 250 UNIT K/W STATIC CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff VGS PARAMETER gate-source breakdown voltage gate-source cut-off voltage gate-source voltage BF246A; BF247A BF246B; BF247B BF246C; BF247C IDSS drain current BF246A; BF247A BF246B; BF247B BF246C; BF247C IGSS Note 1. Measured under pulse conditions: tp = 300 s; 0.02. DYNAMIC CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL Cis Crs Cos yfs fgfs PARAMETER input capacitance reverse transfer capacitance output capacitance forward transfer admittance cut-off frequency CONDITIONS ID = 10 mA; f = 1 MHz; VDS = 15 V ID = 10 mA; f = 1 MHz; VDS = 15 V ID = 10 mA; f = 1 MHz; VDS = 15 V ID = 10 mA; f = 1 kHz; VDS = 15 V gfs = 0.7 of its value at 1 kHz; VGS = 0 MIN. - - - 8 - TYP. 11 3.5 5 17 450 MAX. UNIT - - - - - pF pF pF mS MHz gate leakage current VGS = -15 V; VDS = 0 VGS = 0; VDS = 15 V; note 1 30 60 110 - - - - - 80 140 250 -5 mA mA mA nA CONDITIONS IG = -1 A; VDS = 0 ID = 10 nA; VDS = 15 V ID = 200 A; VDS = 15 V -1.5 -3.0 -5.5 - - - -4.0 -7.0 -12.0 V V V MIN. -25 -0.6 - - TYP. - -14.5 MAX. V V UNIT 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors PACKAGE OUTLINE BF246A; BF246B; BF246C; BF247A; BF247B; BF247C handbook, full pagewidth 0.40 min 4.2 max 1.7 1.4 1 4.8 max 2.54 3 2 5.2 max 12.7 min 0.48 0.40 0.66 0.56 2.5 max (1) MBC015 - 1 Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. Fig.2 TO-92 variant. 1996 Jul 29 4 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF246A; BF246B; BF246C; BF247A; BF247B; BF247C This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 29 5 |
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